s.ti.zu , o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 STP5NA80 STP5NA80fi n - channel enhancement mode fast power mos transistor type STP5NA80 STP5NA80fi vdss 800 v 800 v rds(on) < 2.4q < 2.4 } id 4.7 a 2.8 a typical ros(on) = 1.8h 30v gate to source voltage rating 100% avalanche tested repetitive avalanche data at 100c low intrinsic capacitances gate charge minimized reduced threshold voltage spread description this series of power mosfets represents the most advanced high voltage technology. the optimized cell layout coupled with a new proprietary edge termination concur to give the device low ros(on) and gate charge, unequalled ruggedness and superior switching performance. applications . high current, high speed switching . switch mode power supplies (smps) . dc-ac converters for welding equipment and uninterruptible power supplies and motor drive absolute maximum ratings to-220 isowatt220 internal schematic diagram 3(2-) g (1) symbol vds parameter drain-source voltage (vgs = 0) vdgr drain-gate voltage (rgs = 20 kft) vgs id id gate-source voltage drain current (continuous) at tc = 25 c drain current (continuous) at tc = 100 c !dm(?) drain current (pulsed) ptot total dissipation at tc = 25 c viso derating factor insulation withstand voltage (dc) tstg storage temperature tj max. operating junction temperature value STP5NA80 STP5NA80fi 800 800 30 4.7 3 19 125 1 ? 2.8 1.8 19 45 0.36 2000 -65 to 150 150 unit v v v a a a w w/c v c c ?) pulse width limited by safe operating area nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
STP5NA80/fi thermal data rthj-case rthj-amb rt he- sink t, thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose to-220 1 isowatt220 2.78 62.5 0.5 300 c/w c/w c/w c avalanche characteristics symbol iar eas ear iar parameter avalanche current, repetitive or not-repetitive (pulse width limited by tj max, 8 < 1%) single pulse avalanche energy (starting t, = 25 c, id = iar, vdd = 50 v) repetitive avalanche energy (pulse width limited by t, max, 5 < 1%) avalanche current, repetitive or not-repetitive (tc = 100 c, pulse width limited by t, max, 6 < 1%) max value 4.7 110 4.5 3 unit a mj mj a electrical characteristics (tease = 25 c unless otherwise specified) off symbol v(br)dss loss igss parameter drain-source breakdown voltage zero gate voltage drain current (vcs = 0) gate-body leakage current (vos = 0) test conditions !d=250na vgs=0 vds = max rating vds = max rating x 0.8 tc=125c vgs = 30 v min. 800 typ. max. 25 250 100 unit v ha ha na on (*) symbol vqs(th) rds(on) id(op) parameter gate threshold voltage static drain-source on resistance on state drain current test conditions vds= vgs lo= 250 (aa vgs = 10v id =2. 5 a vds > b(on) x rds(on)max vgs= 10 v min. 2.25 4.7 typ. 3 1.8 max. 3.75 2.4 unit v sj a dynamic symbol 9fs (*) ciss coss crss parameter forward transconductance input capacitance output capacitance reverse transfer capacitance test conditions vds > ld(on) x rds(on)max id =2. 5 a vds = 25 v f = 1 mhz vgs= 0 min. 2.7 typ. 5.2 1250 140 35 max. unit s 1700 pf 190 pf 50 pf
STP5NA80/fi electrical characteristics (continued) switching on symbol td(on) tr (di/dt)on qg qgs qgd parameter turn-on time rise time turn-on current slope total gate charge gate-source charge gate-drain charge test conditions vdd = 400v id =2. 5 a rg = 47i) vgs = 10v (see test circuit, figure 3) vdd=640v id=5a rg = 47 si vgs = 10 v (see test circuit, figure 5) vdd = 640 v id= 5 a vgs = 10 v min. typ. 40 100 180 55 8 24 max. 55 135 75 unit ns ns a/us nc nc nc switching off symbol tr(voff) tf tc parameter off-voltage rise time fall time cross-over time test conditions vdd=640v id=5a rg = 47 u vgs = 10 v (see test circuit, figure 5) min. typ. 75 25 110 max. 100 35 150 unit ns ns ns source drain diode symbol isd !sdm(?) vsd(?) tr, qrr irrm parameter source-drain current source-drain current (pulsed) forward on voltage reverse recovery time reverse recovery charge reverse recovery current test conditions isd = 4. 7 a vgs = 0 isd = 5 a di/dt = 100 a/u.s vdd = 100v tj = 150c (see test circuit, figure 5) min. typ. 800 15.2 38 max. 4.7 19 1.6 unit a a v ns m.c a (*) pulsed: pulse duration = 300 us, duty cycle (?) pulse width limited by safe operating area 1.5% safe operating areas for to-220 safe operating areas for isowatt220 1 (a) 10 10 10" 1 = <^ / v": i ^ )ic a m i s ^ i ope i t tt 3 0 10* v ^ ' w ilo ^ v . 1 's \ jx s 1q in vs 1 ms 10ms w 1c 10 10" taa??aa2^ifl lu 102 id3 vds (v) < / b.c. ^ /o tip oper s ' . v ^ s' atio , x > ^ v- ii \ s;-- v, \^ o^s 1ms 10ms 10 3rrs |n 0 101 i02 103 v
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